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LPM3413 Datasheet(PDF) 2 Page - Lowpower Semiconductor inc |
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LPM3413 Datasheet(HTML) 2 Page - Lowpower Semiconductor inc |
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2 / 4 page  LPM3413-01 May.-2014 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 2 of 4 Preliminary Datasheet LPM3413 Absolute Maximum Ratings Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TA=25°C ID -3 A TA=70°C -2.0 Pulsed Drain Current IDM -10 Power Dissipation TA=25°C PD 1.4 W TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal resistance ratings Parameter Symbol Typ. Units Maximum Junction-to-Ambient RθJA 125 °C/W |
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