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COM140T Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # COM140T
Description  (COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE
PDF  4 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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COM140T Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
STATIC
P/N COM140T
STATIC
P/N COM240T
Parameter
Min.
Typ. Max. Units Test Conditions
Parameter
Min. Typ.
Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS = 0,
B V
DSS
Drain-Source Breakdown
200
V
V
GS = 0,
Voltage
I
D = 250
mA
Voltage
I
D = 250
mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS,
I
D = 250
mAV
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, I
D = 250
mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS = - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
m A
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
m A
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
m A
V
DS = 0.8 Max. Rat., VGS = 0
,
Current
0.2
1.0
m A
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
14
A
V
DS
2 V
DS(on),VGS = 10 V
I
D(on)
On-State Drain Current1
14
A
V
DS
2 V
DS(on),VGS = 10 V
V
DS(on)
Static Drain-Source On-State
1.40
1.73
V
V
GS = 10 V, ID = 15 A
V
DS(on)
Static Drain-Source On-State
1.8
2.1
V
V
GS = 10 V, ID = 10 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
.12
V
GS = 10 V, ID = 15 A
R
DS(on)
Static Drain-Source On-State
0.21
V
GS = 10 V, ID = 10 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
.22
V
GS = 10 V, ID = 15 A,
R
DS(on)
Static Drain-Source On-State
0.41
V
GS = 10 V, ID = 10 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
f
s
Forward Transductance1
10
S(W ) V
DS
2 V
DS(on),
I
D = 15 A
g
f
s
Forward Transductance1
6.0
S(W ) V
DS
2 V
DS(on),
I
D = 10 A
C
iss
Input Capacitance
1275
pF
V
GS = 0
C
iss
Input Capacitance
1000
pF
V
GS = 0
C
oss
Output Capacitance
550
pF
V
DS = 25 V
C
oss
Output Capacitance
250
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
160
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
100
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
16
ns
V
DD = 30 V, ID @5 A
T
d(on)
Turn-On Delay Time
17
ns
V
DD =75 V, ID @ 18 A
t
r
Rise Time
19
ns
R
g = 5 W ,VGS =10 V
t
r
Rise Time
52
ns
R
g =5 W ,VGS= 10 V
T
d(off)
Turn-Off Delay Time
42
ns
T
d(off)
Turn-Off Delay Time
36
ns
t
f
Fall Time
24
ns
t
f
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 27
A
Modified MOSPOWER
I
S
Continuous Source Current
- 18
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 108
A
the integral P-N
I
SM
Source Current1
- 72
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 2.0V
T
C = 25 C
,I
S = -24 A, VGS = 0
V
SD
Diode Forward Voltage1
-1.5
V
T
C = 25 C
,I
S = -18 A, VGS = 0
t
r
r
Reverse Recovery Time
200
ns
T
J = 150 C
,I
F =IS,t
r
r
Reverse Recovery Time
350
ns
T
J = 150 C
,I
F =IS,
d
l
F/ds = 100 A/ms
d
l
F/ds = 100 A/ms
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S



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