www.berex.com

BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

BCF020T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)

The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and

increased reliability.

Product Features

•

20 dBm Typical Output Power

•

13.5 dB Typical Power Gain @ 12 GHz

•

Low Phase Noise

•

0.3 X 200 Micron Recessed Gate

Applications

•

Commercial

•

Military / Hi-Rel

•

Test & Measurement

PARAMETER/TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

MINIMUM

40

60

80

mA

Gm

25

35

mS

Vp

-3.5

-2.0

-0.5

V

-15

-11

V

-10

-7

V

Thermal Resistance (Au-Sn Eutectic Attach)

160

° C/W