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MMST2222A Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMST2222A Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  MMST2222A Document number: DS30080 Rev. 11 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated MMST2222A Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage BVCBO 75 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 10µA, IC = 0 Collector Cut-Off Current ICBO 10 nA µA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150°C Collector Cut-Off Current ICEX 10 nA VCE = 60V, VEB(OFF) = 3V Base Cutoff Current IBL 20 nA VCE = 60V, VEB(OFF) = 3V ON CHARACTERISTICS (Note 7) DC Current Gain hFE 35 50 75 100 40 50 35 300 IC = 100A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20 A, f = 1.0MHz Noise Figure NF 4.0 dB VCE = 10V, IC = 100A, RS = 1kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td 10 ns VCC = 30V, IC = 150mA, VBE(OFF) = -0.5V, IB1 = 15mA Rise Time tr 25 ns Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Fall Time tf 60 ns Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
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