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2SC5757 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SC5757
Description  Silicon NPN Epitaxial VHF/UHF wide band amplifier
PDF  10 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC5757 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC5757
Rev.4, Jul. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
3.5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
10

VI
C = 10 µA, IE = 0
Collector cutoff current
I
CBO

600
nA
V
CB = 10 V, IE = 0
Collector cutoff current
I
CEO

200
nA
V
CE = 3.5 V, RBE = Infinite
Emitter cutoff current
I
EBO

100
nA
V
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
80
100
130
V
CE = 1 V, IC = 5 mA
Collector output capacitance
C
ob
0.9
1.2
1.5
pF
V
CB = 1 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
4.5
6.5
GHz
V
CE = 1 V, IC = 5 mA
Power gain
PG
8
11
dB
V
CE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF
1.1
2.0
dB
V
CE = 1 V, IC = 5 mA,
f = 900 MHz



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