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BT09VG Datasheet(PDF) 1 Page - BeRex Corporation

Part # BT09VG
Description  5-4000 MHz Wideband Medium Power Amplifier
PDF  17 Pages
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Manufacturer  BEREX [BeRex Corporation]
Direct Link  http://www.berex.com
Logo BEREX - BeRex Corporation

BT09VG Datasheet(HTML) 1 Page - BeRex Corporation

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1
Rev. F
BeRex
●website: www.berex.com
●email: sales@berex.com
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2018 BeRex
5-4000 MHz Wideband Medium Power Amplifier
BT09VG
OIP3 = 41.0 dBm @ 1900 MHz
Gain = 15.5 dB @ 1900 MHz
Output P1 dB = 25.5 dBm @ 1900 MHz
50 Ω Cascadable
Lead-free/RoHS-compliant SOT-89 SMT package
BeRex’s BT09VG is a high performance and a
high dynamic range amplifier in a low cost
surface mount package(SOT-89) with a RoHS
-compliant, that incorporates reliable het-
erojunction-bipolar-transistor (HBT) devices
fabricated with InGaP GaAs technology.
This device is designed for use where high
linearity is required and features high OIP3
and P1 with low consumption current
(85mA) and requires a few external match-
ing components such as a DC blocking ca-
pacitors on the In/Output pin, a bypass ca-
pacitor and a RF choke for the out port.
All devices are 100% RF/DC tested.
Product Description
Device Features
• Base station Infrastructure/RFID
• Commercial/Industrial/Military wireless system
Applications
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 13 dBm per tone separated by 1 MHz.
Typical Performance
1
Absolute Maximum Ratings
Parameter
Frequency
Unit
900
1900
2450
3500
MHz
Gain
21.5
15.5
13.5
10.8
dB
S11
-16.0
-30.0
-14.0
-15.0
dB
S22
-24.0
-19.0
-19.0
-14.0
dB
OIP3
2
39.0
41.0
41.0
42.0
dBm
P1dB
24.5
25.5
27.0
25.0
dBm
Noise Figure
3.7
4.0
4.7
5.4
dB
Min.
Typical
Max.
Unit
Bandwidth
5
4000
MHz
IC @ (Vc = 5V)
140
160
180
mA
VC
5.0
V
RTH
50
°C/W
Parameter
Unit
Rating
Operating Case Temperature
°C
-40 to +85
Storage Temperature
°C
-55 to +155
Junction Temperature
°C
+220
Operating Voltage
V
+7.0
Supply Current
mA
220
Input RF Power
dBm
23
*Operation of this device above any of these parameters may result in permanent damage.
Application Circuits
*external matching circuit: refer to the page 5 to 14.
RF Choke
RF In
RF Out
Vcc
BT09VG
DC
Block
Bypass
DC
Block


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