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IRF5210 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IRF5210
Description  P-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF5210 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
IRF5210,IIRF5210
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤0.06Ω
·
Enhancement mode:
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRIPTION
·
Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-40
A
IDM
Drain Current-Single Pulsed
-140
A
PD
Total Dissipation @TC=25℃
200
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.75
℃
/W
Rth(j-a)
Channel-to-ambient thermal resistance
62
℃
/W


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