RN2007

~RN2009

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN2007

10

47

RN2008

22

47

RN2009

47

22

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2007,RN2008,RN2009

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1007~RN1009

Equivalent Circuit and Bias Resister Values

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

RN2007

−6

RN2008

−7

Emitter-base voltage

RN2009

−15

V

Collector current

−100

mA

Collector power dissipation

400

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Unit: mm

JEDEC

TO-92

EIAJ

SC-43

TOSHIBA

2-5F1B

Weight: 0.21g