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IRF7809 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7809 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 4 page ![]() www.irf.com 1 IRF7809/IRF7811 Parameter Symbol IRF7809 IRF7811 Units Drain-Source Voltage V DS 30 28 V Gate-Source Voltage V GS ±12 Continuous Drain or Source T A = 25°C I D 17.6 14 Current (V GS ≥ 4.5V) T L = 90°C 16.3 13 A Pulsed Drain Current I DM 100 100 Power Dissipation T A = 25°C P D 3.5 W T L = 90°C 3.0 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 2.5 2.5 A Pulsed Source Current I SM 50 50 • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of mobile microprocessors. The IRF7809/IRF7811 employs a new CopperStrapTM interconnect technology pioneered by International Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.5W @ 25 °C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and reliability and reducing board space. HEXFET® Chipset for DC-DC Converters IRF7809 IRF7811 V DS 30V 28V R DS(on) 7.5 m Ω 11 m Ω Q G 77.5 nC 23 nC Q sw 23.9 nC 7 nC Q oss 30 nC 31 nC Absolute Maximum Ratings Parameter Max. Units Maximum Junction-to-Ambient Rθ JA 35 °C/W Maximum Junction-to-Lead Rθ JL 20 °C/W Thermal Resistance DEVICE RATINGS To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7809/IRF7811 Provisional Datasheet SO-8 1/19/00 PD - 93812 PD - 93813 |
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