SI7461DP datasheet(2/5 Pages) VISHAY

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Si7461DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 72567

S-40411—Rev. C, 15-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1

−3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = −60 V, VGS = 0 V

−1

Zero Gate Voltage Drain Current

IDSS

VDS = −60 V, VGS = 0 V, TJ = 70_C

−10

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−40

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −14.4 A

0.0115

0.0145

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −12.6 A

0.015

0.019

Forward Transconductancea

gfs

VDS = −15 V, ID = −14.4 A

Diode Forward Voltagea

VSD

IS = −4.5 A, VGS = 0 V

−0.8

−1.2

Dynamicb

Total Gate Charge

121

190

Gate-Source Charge

Qgs

VDS = −30 V, VGS = −10 V, ID = −14.4 A

Gate-Drain Charge

Qgd

Gate-Resistance

Turn-On Delay Time

td(on)

Rise Time

VDD = −30 V, RL = 30 W

Turn-Off Delay Time

td(off)

VDD = −30 V, RL = 30 W

ID ^ −1 A, VGEN = −10 V, Rg = 6 W

205

310

Fall Time

135

Source-Drain Reverse Recovery Time

trr

IF = −4.5 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1234

VGS = 10 thru 4 V

25_C

TC = 125_C

−55_C

3 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

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