RI2N60 datasheet(2/5 Pages) RECTRON

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RI2N60

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Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

600

Drain Current

ID(Tc=25°C)

2.0

Drain Current

ID(Tc=100°C)

1.3

Drain Current - Pulsed

IDM

6.0

Gate-Source Voltage

VGSS

±30

Single Pulsed Avalanche Energy

EAS

120

Repetitive Avalanche Energy

EAR

5.4

Avalanche Current

IAR

2.0

Power Dissipation

PD(Tc=25°C)

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

ID=250μA

600

Zero Gate Voltage Drain Current

IDSS

VDS=600V

VGS=0V

1.0

μA

VDS=480V

TC=125°C

100

μA

Gate-Body Leakage Current,

Forward

IGSS

VGS=±30V

VDS=0V

±0.1

μA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=250μA

2.0

4.0

Static Drain-Source

On-Resistance

RDS(on)

VGS=10V

ID=1.0A

4.0

5.0

Ω

Forward Transconductance

gFS

VDS=40V

ID=1.0A

2.05

Drain-Source Diode Forward

Voltage

VSD

VGS=0V

IS=2.0A

1.4

Input Capacitance

Ciss

VDS=25V

VGS=0V

f=1.0MHz

320

420

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

4.5

6.0

Turn-On Delay Time

td(on)

VDD=300V

ID=2.0A

RG=25Ω

8.0

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Absolute Maximum Ratings(Ta=25°C)

Electrical Characteristics(Ta=25°C)

RI2N60 Datasheet(PDF) 2 Page - Rectron Semiconductor

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