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RM5N650IP Datasheet(PDF) 2 Page - Rectron Semiconductor

Part # RM5N650IP
Description  N-Channel Super Junction Power MOSFET
PDF  8 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RM5N650IP Datasheet(HTML) 2 Page - Rectron Semiconductor

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Parameter
Symbol
Value
Unit
Repetitive Avalanche energy
tAR limited by Tjmax
(Note 1)
EAR
0.4
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55...+150
°C
Table 2.
Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance
Junction-to-Case
Maximum
RthJC
2.55
°C /W
Thermal Resistance
Junction-to-Ambient
Maximum
RthJA
75
°C /W
Table 3.
Electrical Characteristics (TA=25
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
650
V
Zero Gate Voltage Drain Current(Tc=25
)
IDSS
VDS=650V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=125
)
IDSS
VDS=650V,VGS=0V
50
μA
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
3
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
780
900
mΩ
Dynamic Characteristics
Forward Transconductance
gFS
VDS = 20V, ID = 3A
4.8
S
Input Capacitance
Clss
VDS=50V,VGS=0V,
F=1.0MHz
460
pF
Output Capacitance
Coss
45
pF
Reverse Transfer Capacitance
Crss
3.5
pF
Total Gate Charge
Qg
VDS=480V,ID=5A,
VGS=10V
10
20
nC
Gate-Source Charge
Qgs
1.6
nC
Gate-Drain Charge
Qgd
4
nC
Intrinsic gate resistance
RG
f = 1 MHz open drain
2.5
Ω
Switching times
Turn-on Delay Time
td(on)
VDD=380V,ID=3A,
RG=18Ω,VGS=10V
6
nS
Turn-on Rise Time
tr
3
nS
Turn-Off Delay Time
td(off)
50
60
nS
Turn-Off Fall Time
tf
9
15
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
TC=25°C
5
A
Pulsed Source-drain current(Body Diode)
ISDM
15
A
Forward on voltage
VSD
Tj=25°C,ISD=5A,VGS=0V
1
1.3
V
Reverse Recovery Time
trr
Tj=25°C,IF=5A,di/dt=100A/μs
250
nS
Reverse Recovery Charge
Qrr
2.2
uC
Peak reverse recovery current
Irrm
15
A
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25 ,VDD=50V,VG=10V, RG=25Ω



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