General Description

The

gate charge. This super junction MOSFET fits the industry’s

AC-DC

SMPS requirements for

PFC,

AC/DC power

conversion, and industrial power applications.

Features

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Ultra Low Gate Charge cause lower driving requirements

100% Avalanche Tested

ROHS compliant

Application

Power factor correction

PFC

Switched mode power supplies(SMPS)

Uninterruptible Power Supply

UPS

800

V

1000

mΩ

5

A

Package Marking And Ordering Information

Device

Device Package

Marking

TO-251

TO-252

Table 1.

)

Parameter

Symbol

Value

Unit

Drain-Source Voltage (

=

0V

800

V

Gate-Source Voltage (

=

0V)

30

V

Continuous Drain Current

at Tc=25°C

5

A

Continuous Drain Current

at Tc=100°C

3

A

Pulsed drain current

(Note 1)

15

A

Derate above 25

°C

81

0.65

W

W/

°C

Single pulse avalanche energy

(Note 2)

75

mJ

Avalanche current

(Note 1)

2.5

A

Repetitive Avalanche energy

(Note 1)

0.4

mJ

Schematic diagram

TO-251

TO-252

RM5N800IP

RM5N800LD

RM5N800IP

RM5N800LD

5N800

5N800

2016-09

REV:O15