Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

02N60P Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # 02N60P
Description  N CHANNEL ENHANCEMENT MODE
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ETC [List of Unclassifed Manufacturers]
Direct Link  
Logo ETC - List of Unclassifed Manufacturers

02N60P Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

  02N60P Datasheet HTML 1Page - List of Unclassifed Manufacturers 02N60P Datasheet HTML 2Page - List of Unclassifed Manufacturers 02N60P Datasheet HTML 3Page - List of Unclassifed Manufacturers 02N60P Datasheet HTML 4Page - List of Unclassifed Manufacturers 02N60P Datasheet HTML 5Page - List of Unclassifed Manufacturers 02N60P Datasheet HTML 6Page - List of Unclassifed Manufacturers  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.SiliconStandard.com
2 of 6
SSM02N60P
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
600
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
-
-
8
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=20V, ID=1A
-
0.2
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
3
ID=2A
-
14
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
td(on)
Turn-on Delay Time
3
VDD=300V
-
9.5
-
ns
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=150Ω
-9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
-
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.5V
-
-
2
A
ISM
Pulsed Source Current ( Body Diode )
1
--
6
A
VSD
Forward On Voltage
3
Tj=25℃, IS=2A, VGS=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25
oC , V
DD=50V , L=60mH , RG=25Ω , IAS=2A.
3.Pulse width <300us , duty cycle <2%.
± 20V
±100
Rev.2.01 6/06/2003



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com