Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

1.32

/W

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

30

-

V

Zero Gate Voltage Drain Current

-

-

1

A

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1.0

1.5

2.0

V

-

1.1

1.4

m

Drain-Source On-State Resistance

-

1.45

1.8

m

Forward Transconductance

90

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

7350

8800

PF

Output Capacitance

-

1930

2300

PF

Reverse Transfer Capacitance

F=1.0MHz

-

110

130

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

15

-

nS

Turn-on Rise Time

-

10

-

nS

Turn-Off Delay Time

-

51

-

nS

Turn-Off Fall Time

-

12

-

nS

Total Gate Charge

-

125

140

nC

Gate-Source Charge

-

18

nC

Gate-Drain Charge

-

13

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

1.2

V

Diode Forward Current

(Note 2)

-

-

185

A

Reverse Recovery Time

-

38

nS

Reverse Recovery Charge

Qrr

di/dt = 100A/s

(Note3)

-

126

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25