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2PD601AW Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2PD601AW Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page ![]() Production specification NPN Silicon Epitaxial Planar Transistor 2PD601AW F028 www.gmesemi.com Rev.A 1 FEATURES Collector Current.(IC= 100mA) Excellent HFE Linearity. Power dissipation.(PC=200mW) APPLICATIONS General purpose application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2PD601AW 6D/6E/6F SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free |
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