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BGY280 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY280 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 11 page ![]() 2000 Nov 15 2 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 FEATURES • Dual band GSM amplifier • 3.6 V nominal supply voltage • 33.5 dBm output power for GSM1800 • 35.5 dBm output power for GSM900 • Easy output power control by DC voltage. • Internal input and output matching. APPLICATIONS • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. DESCRIPTION The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are 13.75 x 11 x 1.7 mm. The module consists of two separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching. PINNING - SOT559A PIN DESCRIPTION 1,2,3,6,9,10,11,14 Ground 4 RF output 2 (1800 MHz) 5VS2 (1800 MHz) 7VS1 (900 MHz) 8 RF output 1 (900 MHz) 12 RF input 1 (900 MHz) 13 VC1 (900 MHz) 15 VC2 (1800 MHz) 16 RF input 2 (1800 MHz) Fig.1 Simplified outline Bottom view 8 7 5 6 4 12 13 15 14 16 12 3 11 10 9 MBL031 QUICK REFERENCE DATA RF performance at Tmb =25 °C. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). MODE OF OPERATION f (MHz) VS (V) VC (V) PL (dBm) Gp (dB) η (%) ZS, ZL ( Ω) Pulsed; δ =2:8 880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50 1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS1, VS2 DC supply voltage VC1,2 =0; RFIN =off − 7V VC1,2 > 0.5 V; RFIN =on − 5.5 V VC1, VC2 DC control voltage − 3V PD1, PD2 input drive power − 10 mW PL1 load power 1 − 4W PL2 load power 2 − 3W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C |
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