2 - 4

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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

Note 2

18

28

S

C

iss

3950

pF

C

oss

V

640

pF

C

rss

210

pF

t

d(on)

35

ns

t

r

V

42

ns

t

d(off)

R

75

ns

t

f

20

ns

Q

g(on)

150

nC

Q

gs

V

26

nC

Q

gd

85

nC

R

thJC

0.40

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

32

A

I

SM

Repetitive; pulse width limited by T

JM

128

A

V

SD

I

1.5

V

t

rr

250

ns

Q

RM

0.75

mC

I

RM

7.5

A

I

-di/dt = 100 A/ms,

V

Note: 1.

I

IXFR30N50: I

IXFR32N50: I

IXFR 30N50Q

IXFR 32N50Q

Note: 2.

Pulse test, t

£ 300 ms,

duty cycle d

£ 2 %

ISOPLUS 247 (IXFR) OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

S

13.21

13.72

.520 .540

T

15.75

16.26

.620 .640

U

1.65

3.03

.065 .080

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025