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SS3150 Datasheet(PDF) 1 Page - Shenzhen Yixinwei Technology Co., Ltd. |
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SS3150 Datasheet(HTML) 1 Page - Shenzhen Yixinwei Technology Co., Ltd. |
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1 / 2 page  B320 thru B3200 FEATURES Metal-Semiconductor junction with guard ring Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band denotes cathode Weight : 0. 231 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 3.0 Amperes Epitaxial construction 1 of 2 PARAMETER SYMBOL UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current IF A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage @ 3.0A VF 0.90 V Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C Typical Junction Capacitance CJ pF Typical Thermal Resistance R JA °C/W Operating Temperature Range TJ °C Storage Temperature Range TSTG °C 3.0 IFSM 80.0 5.0 10.0 A 0.50 0.85 IR 0.5 0.2 mA -55 to +150 0.70 70 180 150 110 100 -55 to +125 B 3200 B 330 B3150 B 3100 B 380 B 360 B 350 B 340 B 320 SMC B A C H E F G D All Dimensions in millimeter SMC DIM. MIN. MAX. A C D E F G H B 6.60 7.11 6.22 5.59 2.75 3.15 0.31 0.15 7.75 8.13 0.05 0.20 2.00 2.62 0.76 1.52 20 SS32 SS33 SS34 SS35 SS36 SS38 SS3100 SS3150 SS3200 |
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