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LTC3786 Datasheet(PDF) 4 Page - Linear Technology

Part # LTC3786
Description  60V PolyPhase Synchronous Boost Controller
PDF  38 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC3786 Datasheet(HTML) 4 Page - Linear Technology

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LTC3784
4
3784fb
For more information www.linear.com/LTC3784
elecTrical characTerisTics The
l
denotes the specifications which apply over the specified operating
junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = 12V, unless otherwise noted (Note 2).
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3784 is tested under pulsed load conditions such that
TJ ≈ TA. The LTC3784E is guaranteed to meet specifications from
0°C to 85°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3784I is guaranteed over the –40°C to 125°C operating junction
temperature range, the LTC3784H is guaranteed over the –40°C to 150°C
operating temperature range and the LTC3784MP is tested and guaranteed
over the full –55°C to 150°C operating junction temperature range. High
junction temperatures degrade operating lifetimes; operating lifetime
is derated for junction temperatures greater than 125°C. Note that the
maximum ambient temperature consistent with these specifications is
determined by specific operating conditions in conjunction with board
layout, the rated package thermal impedance and other environmental
factors. The junction temperature (TJ, in °C) is calculated from the ambient
temperature (TA, in °C) and power dissipation (PD, in Watts) according to
the formula: TJ = TA + (PD • θJA), where θJA = 43°C/W for the QFN package
and
θJA = 80°C/W for the SSOP package.
Note 3: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 4: The LTC3784 is tested in a feedback loop that servos VFB to the
output of the error amplifier while maintaining ITH at the midpoint of the
current limit range.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: Rise and fall times are measured using 10% and 90% levels. Delay
times are measured using 50% levels.
Note 7: see Minimum On-Time Considerations in the Applications
Information section.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
INTVCC Linear Regulator
Internal VCC Voltage
6V < VBIAS < 60V, VEXTVCC = 0V
5.2
5.4
5.6
V
INTVCC Load Regulation
ICC = 0mA to 50mA
0.5
2
%
Internal VCC Voltage
6V < VEXTVCC < 13V
5.2
5.4
5.6
V
INTVCC Load Regulation
ICC = 0mA to 40mA, VEXTVCC = 8.5V
0.5
2
%
EXTVCC Switchover Voltage
EXTVCC Ramping Positive
l
4.5
4.8
5
V
EXTVCC Hysteresis
250
mV
Oscillator and Phase-Locked Loop
Programmable Frequency
RFREQ = 25k
RFREQ = 60k
RFREQ = 100k
335
105
400
760
465
kHz
kHz
kHz
fLOW
Lowest Fixed Frequency
VFREQ = 0V
320
350
380
kHz
Highest Fixed Frequency
VFREQ = INTVCC
488
535
585
kHz
Synchronizable Frequency
PLLIN/MODE = External Clock
l
75
850
kHz
PGOOD Output
PGOOD Voltage Low
IPGOOD = 2mA
0.2
0.4
V
PGOOD Leakage Current
VPGOOD = 5V
±1
µA
PGOOD Trip Level
VFB with Respect to Set Regulated Voltage
VFB Ramping Negative
Hysteresis
–12
–10
2.5
–8
%
%
VFB Ramping Positive
Hysteresis
8
10
2.5
12
%
%
PGOOD Delay
PGOOD Going High to Low
45
µs
OV Protection Threshold
VFB Ramping Positive, OVMODE = 0V
1.296
1.32
1.344
V
BOOST1 and BOOST2 Charge Pump
BOOST Charge Pump Available Output
Current
VSW1,2 = 12V; VBOOST1,2 – VSW1,2 = 4.5V;
FREQ = 0V, Forced Continuous or
Pulse-Skipping Mode
55
µA



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