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LT3668 Datasheet(PDF) 22 Page - Linear Technology |
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LT3668 Datasheet(HTML) 22 Page - Linear Technology |
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22 / 28 page ![]() LT3668 22 3668fa For more information www.linear.com/LT3668 APPLICATIONS INFORMATION PCB Layout For proper operation and minimum EMI, care must be taken during printed circuit board layout. Figure 8 shows the recommended component placement with trace, ground plane and via locations. Note that large, switched currents flow in the LT3668’s IN1, SW, GND and DA pins, thecatchdiodeandtheinputcapacitor.Theloopformedby these components should be as small as possible. These components,alongwiththeinductorandoutputcapacitor, should be placed on the same side of the circuit board, and their connections should be made on that layer. Place a local, unbroken ground plane below these components. The SW and BOOST nodes should be as small as possible. Keep the FB1 node small so that the ground traces will shield it from the SW and BOOST nodes. The exposed pad must be soldered such that it can act as a heat sink. (See High Temperature Considerations section.) Hot Plugging Safely The small size, robustness and low impedance of ceramic capacitors make them an attractive option for the input bypass capacitors of LT3668 circuits. However, these ca- pacitors can cause problems if the LT3668 is plugged into a live supply. The low loss ceramic capacitor, combined with stray inductance in series with the power source, forms an under damped tank circuit, and the voltage at the input pins of the LT3668 can ring to twice their nominal input voltage, possibly exceeding the LT3668’s rating and damaging the part. If the input supply is poorly controlled or the user will be plugging the LT3668 into an energized supply, the input network should be designed to prevent thisovershoot.SeeLinearTechnologyApplicationNote 88 for a complete discussion. High Temperature Considerations The LT3668’s maximum rated junction temperature of 125°C (E- and I-grade) and 150oC (H-grade), respectively, limits its power handling capability. Power dissipation within the switching regulator can be estimated by calculating the total power loss from an efficiency measurement and subtracting inductor loss. Be aware that at high ambient temperatures the external Schottky diode will have significant leakage current (see Typical Performance Characteristics), increasing the qui- escent current of the switching regulator. The power dissipation of each LDO is comprised of two components. Each power device dissipates: PPASS = (VIN − VOUT) • IOUT where PPASS is the power, VIN the input voltage, VOUT the output voltage, and IOUT the output current. The base currents of the LDO power PNP transistors flow to ground internally and are the major component of the ground current. For each LDO, this causes a power dissipation PGND of: PGND = VIN • IGND where VIN is the input voltage and IGND the ground current generated by the corresponding power device. GND pin Figure 8. Good PCB Layout Ensures Proper, Low EMI Operation 1 16 SW IN1 GND OUT1 15 14 13 12 11 10 9 VIAS TO LOCAL GROUND PLANE 2 3 4 5 6 7 8 |
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