HCPSA13 datasheet(1/4 Pages) HOTTECH

Part #	HCPSA13

Description	GENERAL PURPOSE TRANSISTOR

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

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HCPSA13(NPN)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : MPSA13

FEATURES



Darlington Transistors

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol Test conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=0.1mA, IE=0

30

V

Collector-Emitter Breakdown Voltage

VCEO

IC=1mA, IB=0

30

V

Emitter-Base Breakdown Voltage

VEBO

IE=0.1mA , IC=0

10

V

Collector Cut-off Current

ICBO

VCB=30V , IE=0

0.1

μA

Emitter Cut-off Current

IEBO

VEB=10V , IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=5V , IC=10mA

5000

hFE(2)

VCE=5V, IC=100mA

10000

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA , IB=0.1mA

1.5

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=5mA , IB=100mA

2.0

V

Transition Frequency

fT

VCE=5V,IC=10mA,f=100MHz

125

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Current-Continuous

IC

0.5

A

Collector Power Dissipation

PD

625

mW

Junction Temperature

TJ

150

°C

Thermal Resistance Junction to Ambient

RӨJA

200

°C/W

Storage Temperature

Tstg

-55~+150

°C

TO-92

1:EMITTER

2:BASE 3:COLLECTOR

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HCPSA13 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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