 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HEBST52 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
|
|
|||||||||||||||||||||||||||||
HEBST52 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
|
|
2 / 4 page  ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HEBST52(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics Fig.1 DCcurrent gain; typical values. handbook, full pagewidth 0 5000 1000 2000 3000 4000 MGD838 10−1 1 IC (mA) hFE 10 102 103 VCE =10V. Fig.2 Test circuit for switching times. handbook, full pagewidth RC R2 R1 DUT MLB826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC Vi = 10 V; T = 200 µs; tp =6 µs; tr =tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB =10kΩ; RC =18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi =50 Ω. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
