CA3127 datasheet(2/9 Pages) RENESAS

2 / 9 page

CA3127

FN662 Rev.5.00

Page 2 of 9

Jun 5, 2006

Absolute Maximum Ratings

Thermal Information

The following ratings apply for each transistor in the device

Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V

Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V

Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V

Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C

Thermal Resistance (Typical, Note 2)

JA (°C/W)

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120

Maximum Power Dissipation, PD (Any One Transistor) . . . . .85mW

Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175°C

Maximum Junction Temperature (Plastic Packages). . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to

the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

JA is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications

TA = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS (For Each Transistor)

Collector-to-Base Breakdown Voltage

IC = 10A, IE = 0

Collector-to-Emitter Breakdown Voltage

IC = 1mA, IB = 0

Collector-to-Substrate Breakdown-Voltage

IC1 = 10A, IB = 0, IE = 0

Emitter-to-Base Breakdown Voltage (Note 3)

IE = 10A, IC = 0

5.7

Collector-Cutoff-Current

VCE = 10V IB = 0

0.5

A

Collector-Cutoff-Current

VCB = 10V, IE = 0

DC Forward-Current Transfer Ratio

VCE = 6V

IC = 5mA

IC = 1mA

IC = 0.1mA

Base-to-Emitter Voltage

VCE = 6V

IC = 5mA

0.71

0.81

0.91

IC = 1mA

0.66

0.76

0.86

IC = 0.1mA

0.60

0.70

0.80

Collector-to-Emitter Saturation Voltage

IC = 10mA, IB = 1mA

0.26

0.50

Magnitude of Difference in VBE

Q1 and Q2 Matched

VCE = 6V, IC = 1mA

-0.5

Magnitude of Difference in IB

-0.2

A

DYNAMIC CHARACTERISTICS

Noise Figure

f = 100kHz, RS = 500, IC = 1mA

2.2

Gain-Bandwidth Product

VCE = 6V, IC = 5mA

1.15

GHz

Collector-to-Base Capacitance

VCB = 6V, f = 1MHz

See Fig.

-pF

Collector-to-Substrate Capacitance

VCI = 6V, f = 1MHz

Emitter-to-Base Capacitance

VBE = 4V, f = 1MHz

Voltage Gain

VCE = 6V, f = 10MHz, RL = 1k, IC = 1mA

Power Gain

Cascode Configuration

f = 100MHz, V+ = 12V, IC = 1mA

Noise Figure

-3.5

CA3127 Datasheet(PDF) 2 Page - Renesas Technology Corp

CA3127 Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL