HCC2001 datasheet(1/4 Pages) HOTTECH

Part #	HCC2001

Description	GENERAL PURPOSE TRANSISTOR

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

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HCC2001(NPN)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : 2SC2001

FEATURES



High h FE and Low VCE(sat)



HFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ)

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol Test conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=100uA,IE=0

30

V

Collector-Emitter Breakdown Voltage

VCEO

IC=10mA,IB=0

25

V

Emitter-Base Breakdown Voltage

VEBO

IE=100uA,IC=0

5

V

Collector Cut-off Current

ICBO

VCB=30V,IE=0

0.1

μA

Collector Cut-off Current

ICEO

VCE=20V,IB=0

0.1

μA

Emitter Cut-off Current

IEBO

VEB=5V,IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=1V,IC=100mA

90

400

Collector-Emitter Saturation Voltage

VCE(sat)

IC=700mA,IB=70mA

0.6

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=700mA,IB=70mA

1.2

V

Transition Frequency

fT

VCE=6V,IC= 10mA,f=30MHz

50

MHz

CLASSIFICATION OF hFE

Rank

M

L

K

Range

90-180

135-270

200-400

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5

V

Collector Current-Continuous

IC

700

mA

Collector Power Dissipation

PC

600

mW

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55-150

°C

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

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HCC2001 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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