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HCS8050 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HCS8050 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page ![]() HCS8050(NPN) REPLACEMENT TYPE : S8050 FEATURES NPN Silicon Epitaxial Planar Transistor For switching and amplifier applications. Complimentary to HCS8550(PNP) MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC =100μA, IE=0 40 V Collector-Emitter Breakdown Voltage VCEO IC= 100μA, IB=0 25 V Emitter-Base Breakdown Voltage VEBO IE =100μA , IC=0 5 V Collector Cut-off Current ICBO VCB=40V , IE=0 0.1 μA Emitter Cut-off Current IEBO VEB=5V , IC=0 0.1 μA DC Current Gain hFE(1) VCE=1V , IC=50mA 85 400 hFE(2) VCE=1V , IC=500mA 50 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA , IB=50mA 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA , IB=50mA 1.2 V Transition Frequency fT VCE=6V , IC=20mA f=30MHz 150 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0% CLASSIFICATION OF hFE Rank B C D E Range 80-160 120-200 160-300 300-400 Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4 GENERAL PURPOSE TRANSISTOR |
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