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HCSS8550 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HCSS8550 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page  ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4 HCSS8550 (PNP) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : SS8550 FEATURES Power Dissipation PC : 1 W (Ta=25°C) MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=-100μA, IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO IC=-0.1mA, IB=0 -25 V Emitter-Base Breakdown Voltage VEBO IE=-100μA , IC=0 -5 V Collector Cut-off Current ICBO VCB=-40V , IE=0 -0.1 μA Emitter Cut-off Current ICEO VCE=-20V, IE=0 -0.1 μA Emitter Cut-off Current IEBO VEB=-5V , IC=0 -0.1 μA DC Current Gain hFE(1) VCE=-1V , IC=-100mA 85 400 hFE(2) VCE=-1V , IC=-800mA 40 Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA , IB=-80mA -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA , IB=-80mA -1.2 V Base-Emitter Voltage VBE(on) VCE=-1V, IC=-10mA -1 V Out Capacitance COB VCB=-10V, IE=0mA,f=1MHZ 20 pF Transition Frequency fT VCE=-10V,IC=-50mA,f=30MHz 100 MHz CLASSIFICATION OF hFE Rank B C D D3 Range 85-160 120-200 160-300 300-400 Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -1.5 mA Collector Power Dissipation PC 1000 mW Thermal Resistance Junction to Ambient RӨJA 125 °C/W Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR |
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