Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S40B (R)

S40D (R)

Unit

Repetitive peak reverse voltage

100

200

V

2. Reverse polarity (R): Stud is anode.

S40B thru S40JR

S40J (R)

400

S40G (R)

Silicon Standard

Recovery Diode

Conditions

600

pp

g

RMS reverse voltage

70

140

V

DC blocking voltage

100

200

V

Continuous forward current

40

40

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

S40B (R)

S40D (R)

Unit

Diode forward voltage

1.1

1.1

10

10

μA

15

15

mA

Thermal characteristics

Thermal resistance, junction -

case

1.25

1.25

°C/W

15

A

595

Reverse current

595

S40J (R)

10

10

Conditions

280

595

595

-55 to 150

40

40

-55 to 150

1.25

1.1

1.1

9

S40G (R)

1.25

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

-55 to 150

420

600

400

Surge non-repetitive forward

current, Half Sine Wave

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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