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SDT452AP Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SDT452AP Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 5 page  P-Channel E nhancement Mode Field E ffect Transistor S OT-223 Package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) S amHop Microelectronics C orp. August , 2002 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) TYP -30V -5.3A 52 @ V GS = -10V 85 @ V GS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S DT 452AP THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC 12 42 R JA /W C /W C -30 Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage 20 VGS V -Pulsed ID A IDM A Drain-S ource Diode Forward Current IS A Maximum Power Dissipation PD W Operating and S torage Temperature R ange TJ, TS TG -65 to 150 C @ Tc=25 C Derate above 25 C 3 0.08 W/ C Drain Current-Continuous @ TJ=125 C a -5.3 S G D D S G S OT-223 S OT-223 (J 23Z) G D D S -16 5.3 |
Similar Part No. - SDT452AP |
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Similar Description - SDT452AP |
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