Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-6.4

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

-4.1

I DM

Pulsed Drain Current ➀

-26

PD @ TC = 25°C

Max. Power Dissipation

20

W

Linear Derating Factor

0.16

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

120

mJ

IAR

Avalanche Current ➀

—A

EAR

Repetitive Avalanche Energy ➀

—mJ

dv/dt

Peak Diode Recovery dv/dt ➂

-4.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

g

PD -90413

The HEXFET



technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET



TRANSISTORS

THRU-HOLE (TO-205AF)

IRFF9024

60V, P-CHANNEL

01/23/01

www.irf.com

1

TO-39

Product Summary

IRFF9024

-60V

0.28

Ω

-6.4A

Features:

For footnotes refer to the last page