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NE461M02 Datasheet(PDF) 2 Page - NEC

Part # NE461M02
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
PDF  5 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE461M02 Datasheet(HTML) 2 Page - NEC

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NE461M02
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
30
VCEO
Collector to Emitter Voltage
V
15
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
250
PT
Total Power Dissipation2
W
2.0
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector to Emitter Voltage, VCE (V)
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN VS.
COLLECTOR CURRENT
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
IB=0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
100
80
60
40
20
0
10
20
300
100
50
10
0.1
1
10
100
1000
VCE 10 V
VCE = 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
10
30
50
70
100
5.0
3.0
2.0
1.0
0.5
0.3
13
5
10
20
30
f = 1.0 MHz
PART NUMBER
QUANTITY
PACKAGING
NE461M02-T1
1000
Tape & Reel
ORDERING INFORMATION



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