UPD63335 datasheet(2/13 Pages) NEC

2 / 13 page

Philips Semiconductors

PHP/PHB110NQ08LT

N-channel TrenchMOS™ logic level FET

Product data

Rev. 01 — 29 March 2004

2 of 13

9397 750 12924

Ordering information

Limiting values

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PHP110NQ08LT

TO-220AB

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads

SOT78

PHB110NQ08LT

D2-PAK

Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

°C ≤ T

j ≤ 175 °C

VDGR

drain-gate voltage (DC)

°C ≤ Tj ≤ 175 °C; RGS =20kΩ

-75

VGS

gate-source voltage (DC)

±20

drain current (DC)

Tmb =25 °C; VGS =10V; Figure 2 and 3

-75

Tmb = 100 °C; VGS =10V; Figure 2

-75

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3

240

Ptot

total power dissipation

Tmb =25 °C; Figure 1

230

Tstg

storage temperature

−55

175

°C

junction temperature

−55

175

°C

Source-drain diode

source (diode forward) current (DC)

Tmb =25 °C

ISM

peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs

240

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID =75A;

tp = 0.15 ms; VDD ≤ 75 V; RGS =50 Ω;

VGS = 10 V; starting Tj =25 °C

560

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