Features

• High Surge Capability

DO-9 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

V

2000

S380Z (R)

S380Y (R)

1600

S380Y thru S380ZR

Silicon Standard

Recovery Diode

Conditions

2. Reverse polarity (R): Stud is anode.

pp

g

RMS reverse voltage

V

DC blocking voltage

V

Continuous forward current

A

Operating temperature

°C

Storage temperature

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

°C/W

0.16

2000

1414

1.2

S380Z (R)

-55 to 150

-55 to 150

S380Y (R)

1.2

10

12

12

10

1131

1600

380

6335

-55 to 150

Conditions

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

V

A

-55 to 150

6335

380

0.16

Reverse current

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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