2SC1030 datasheet(1/1 Pages) ETC

Part #	2SC1030

Description	SILICON NPN TRASISTORS

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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Power Transistors

www.jmnic.com

2SC1030

Silicon NPN Transistors

1B

2E

3C

Features

With TO-3 package

Low frequency power amplifications

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

150

V

VCEO

Collector to emitter voltage

80

V

VEBO

Emitter to base voltage

6

V

IC

Collector current-Continuous

6

A

PD

Total Power Dissipation@TC=25

50

W

Tj

Junction temperature

200

Tstg

Storage temperature

-55~200

TO-3

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO

Collector-Emitter Sustaining Voltage

IC=0.2A; IB=0

80

V

VCER

Collector-Emitter Sustaining Voltage

ICEO

Collector Cutoff Current

VCE=30V; IB=0

2.0

mA

IEBO

Emitter Cutoff Current

VEB=6V; IC=0

1.0

mA

ICBO

Collector Cutoff Current

VCB=30V; IE=0

1.0

mA

VEBO

Base-emitter breakdown voltage

VCE(sat-1)

Collector-emitter saturation voltages

IC=5.0A; IB=1.0A

1.5

V

VCE(sat-2)

Collector-emitter saturation voltages

VCE(sat-3)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=1A; VCE=5V

35

200

hFE-2

Forward current transfer ratio

IC=5A; VCE=5V

22

hFE-3

Forward current transfer ratio

VBE(on)

Base-emitter On voltages

fT

Current Gain-Bandwidth Product

IC=1A; VCE=5V

10

MHz

hfe

Small-Signal Current Gain

JMnic

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