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ASB0520 Datasheet(PDF) 2 Page - Anachip Corp |
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ASB0520 Datasheet(HTML) 2 Page - Anachip Corp |
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2 / 3 page ![]() ASB0520 SMD Schottky Barrier Diode Anachip Corp. www.anachip.com.tw Rev. 1.0 Aug 2, 2004 2/3 Maximum Rating (at T A=25ºC unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit VRRM Repetitive peak reverse voltage - - 30 V VR Reverse voltage - - 20 V IO Average forward rectified current - - 500 mA IFSM Forward current, surge peak 8.3ms single half sine-wave superimposed on rate load (JEDEC method) - - 2 A TSTG Storage temperature -40 - +125 ºC Tj Junction temperature -40 - +125 ºC Electrical Characteristics (at T A=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit IF=100mA - - 0.36 VF Forward voltage IF=500mA - - 0.47 V IR Reverse current VR=20V - - 100 uA CT Capacitance between terminals f=1MHz, and 0 VDC reverse voltage - 100 - pF |
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