BAV199WQ

Document number: DS38657 Rev. 2 - 2

2 of 5

www.diodes.com

March 2016

© Diodes Incorporated

BAV199WQ

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

85

V

RMS Reverse Voltage

60

V

Forward Continuous Current (Note 6)

Single Diode

Double Diode

160

140

mA

Repetitive Peak Forward Current (Note 6)

500

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

µs

@ t = 1.0ms

@ t = 1.0s

4.0

1.0

0.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

200

mW

Thermal Resistance Junction to Ambient Air (Note 6)

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

85





V

Forward Voltage





0.90

1.0

1.1

1.25

V

Leakage Current (Note 7)





5.0

80

nA

nA

Total Capacitance



2



pF

Reverse Recovery Time





3.0

µs

Notes:

6. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.

7. Short duration pulse test used to minimize self-heating effect.

0

50

100

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (

Fig. 1 Power Derating Curve, Total Package

A

150

200

250

300

Note 6

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1

10

100

I

,

I

N

S

T

A

N

T

A

N

E

O

U

S

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

m

A

)

F

1,000

Fig. 2 Typical Forward Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

(