BAW101Q

Document number: DS38903 Rev. 2 - 2

2 of 4

www.diodes.com

October 2016

© Diodes Incorporated

BAW101Q

Characteristic

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Single Diode

300

600

V

Series Connection

Working Peak Reverse Voltage

DC Blocking Voltage

Single Diode

300

600

V

Series Connection

RMS Reverse Voltage

212

V

Forward Current (Note 6)

Single Diode Loaded

250

140

mA

Double Diodes Loaded

Non-Repetitive Peak Forward Surge Current Square Wave @ t = 1.0µs

4.5

A

Repetitive Peak Forward Current (Note 6)

625

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

400

mW

Thermal Resistance Junction to Ambient Air (Note 6)

312

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

300



V

Forward Voltage



1.1

V

Reverse Current (Note 7)





150

75

nA



µA

Total Capacitance



2.0

pF

Reverse Recovery Time



50

ns

Notes:

6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.

7. Short duration pulse test used to minimize self-heating effect.

0

150

200

500

400

300

100

200

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve, Total Package

A

°

25

125

75

100

50

175

Note 4

1

10

100

1,000

0.4

0.2

0.6

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

F

0.8

1.2

1.0

1.4

T = -55ºC

A

T = 25ºC

A

T = 85ºC

A

T = 125ºC

A

T = 150ºC

A

I

,

I

N

S

T

A

N

T

A

N

E

O

U

S

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

m

A

)

F

Note 6