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HERF1007G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # HERF1007G
Description  Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

HERF1007G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  HERF1007G Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd HERF1007G Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G)
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
0
50
100
150
0
2
4
6
8
10
LEAD TEMPERATURE. ( C)
o
FIG.3- TYPICAL REVERSE CHARACTERISTICS
0
20
40
60
80
100
120
140
0.1
1
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=125 C
0
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
1
2
5
10
20
100
50
50
25
125
100
75
150
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.5- TYPICAL JUNCTION CAPACITANCE
15
2
10
20
50
100
200
500
40
0
80
120
160
200
240
REVERSE VOLTAGE. (V)
HERF1001G~HERF1005G
HERF
1006G
~HER
F1008
G
FIG.6- TYPICAL FORWARD CHARACTERISTICS
1.6
1.8
.4
.6
.8
1.0
1.2
1.4
.01
0.03
0.3
1.0
3.0
10
30
100
0.1
FORWARD VOLTAGE. (V)
HE
RF
10
05
G
HERF1006G~HERF1008G
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0



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