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BSP60 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP60 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 7 page  2011-10-04 1 BSP60-BSP62 1 2 3 4 PNP Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP50...BSP52 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP60 BSP61 BSP62 BSP60 BSP61 BSP62 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C - - - - - - SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BSP60 BSP61 BSP62 VCEO 45 60 80 V Collector-base voltage BSP60 BSP61 BSP62 VCBO 60 80 90 Emitter-base voltage VEBO 5 Collector current IC 1 A Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 mA Total power dissipation- TS ≤ 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 |
Similar Part No. - BSP60 |
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Similar Description - BSP60 |
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