BC807U datasheet(2/7 Pages) INFINEON

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2011-08-11

BC807U

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

≤ 105

K/W

Electrical Characteristics

at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

0.1

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain2)

IC = 100 mA, VCE = 1 V

IC = 500 mA, VCE = 1 V

hFE

160

250

400

Collector-emitter saturation voltage2)

IC = 500 mA, IB = 50 mA

VCEsat

0.7

Base emitter saturation voltage2)

IC = 500 mA, IB = 50 mA

VBEsat

1.2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

200

MHz

Collector-base capacitance

f = 1 MHz, VBE = 10 V

Ccb

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Pulse test: t < 300µs; D < 2%

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