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LTC3770EG Datasheet(PDF) 21 Page - Linear Technology |
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LTC3770EG Datasheet(HTML) 21 Page - Linear Technology |
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21 / 24 page ![]() 21 LTC3770 3770f To set a ±25% margining, select the resistors R3, R4 such that VREFIN = 0.6 ±25% • 0.6 or 118 3 4 25 0 6 .• %• . R R = R4 ≈ 8R3 Choose R3 to be 10k, R4 to be 82k for this application. PC Board Layout Checklist When laying out a PC board follow one of two suggested approaches. The simple PC board layout requires a dedi- cated ground plane layer. Also, for higher currents, it is recommended to use a multilayer board to help with heat sinking power components. • The ground plane layer should not have any traces and it should be as close as possible to the layer with power MOSFETs. • Place CIN, COUT, MOSFETs, D1 and inductor all in one compact area. It may help to have some components on the bottom side of the board. • Use an immediate via to connect the components to ground plane including SGND and PGND of LTC3770. Use several bigger vias for power components. • Use compact plane for switch node (SW) to improve cooling of the MOSFETs and to keep EMI down. • Use planes for VIN and VOUT to maintain good voltage filtering and to keep power losses low. • Flood all unused areas on all layers with copper. Flood- ing with copper will reduce the temperature rise of power component. You can connect the copper areas to any DC net (VIN, VOUT, GND or to any other DC rail in your system). Figure 12. Design Example: 2.5V/10A at 450kHz 3770 F12 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 RUN VON PGOOD VRNG VFB ITH SGND MARGIN1 MARGIN0 ION VREFIN VREFOUT MPGM TRACK/SS RUN FCB Z0 BOOST TG SW PGND BG INTVCC Z1 Z2 ZVIN VIN PLLIN PLLFLTR INTVCC 5V LTC3770EG L1: SUMIDA CEP125-1R8MC-H COUT: CORNELL DUBILIER ESRE181E04B CIN: UNITED CHEMICON THCR60E1H106ZT R6 11k R5 39k RC 20k R3 10k R2 95.3k RON 75k R4 82k RPG 100k CC1 500pF CC2 100pF CSS 0.1µF CVCC 10µF CVIN 0.1µF DB CMDSH-3 D1 B340A + COUT3 23µF x5R x2 COUT1-2 180µF 4V x2 VOUT 2.5V 10A VIN 5V TO 28V + CIN 10µF 50V x3 CB 0.22µF M1 Si4884 L1 1.8µH M2 Si4874 + R1 30.1k R8 51k R7 47k APPLICATIO S I FOR ATIO |
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