MBR180S1 datasheet(2/5 Pages) DIODES

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ADVANCED INFORMATION

MBR180S1

Document number: DS37775 Rev. 2 - 2

2 of 5

www.diodes.com

March 2016

MBR180S1

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VRM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance Junction to Ambient (Note 5)

RθJA

275

°C/W

Typical Thermal Resistance Junction to Case (Note 5)

RθJC

°C/W

Operating Temperature Range

-55 to +175

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)

—

IR = 1.0mA

Forward Voltage Drop

—

0.74

0.59

0.80

—

IF = 1.0A, TA = +25°C

IF = 1.0A, TA = +125°C

Leakage Current (Note 6)

—

0.6

400

—

µA

VR = 80V, TA = +25°C

VR = 80V, TA = +125°C

Total Capacitance

—

VR = 5V, f = 1.0MHz

Notes:

5. Device mounted on FR-4 substrate, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

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