FSB50825AT datasheet(3/13 Pages) ONSEMI

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FSB50825A / FSB50825AT Rev. 1.2

Absolute Maximum Ratings

Symbol

Parameter

Conditions

Rating

Unit

VDSS

Drain-Source Voltage of Each MOSFET

250

*ID 25

Each MOSFET Drain Current, Continuous TC = 25°C

3.6

*ID 80

Each MOSFET Drain Current, Continuous TC = 80°C

2.7

*IDP

Each MOSFET Drain Current, Peak

TC = 25°C, PW < 100 s

9.0

*IDRMS

Each MOSFET Drain Current, Rms

TC = 80°C, FPWM < 20 kHz

1.9

Arms

*PD

Maximum Power Dissipation

TC = 25°C, For Each MOSFET

14.2

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Symbol

Parameter

Conditions

Rating

Unit

VCC

Control Supply Voltage

Applied Between VCC and COM

VBS

High-side Bias Voltage

Applied Between VB and VS

VIN

Input Signal Voltage

Applied Between IN and COM

-0.3 ~ VCC + 0.3

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

Symbol

Parameter

Conditions

Rating

Unit

VRRMB

Maximum Repetitive Reverse Voltage

250

* IFB

Forward Current

TC = 25°C

0.5

* IFPB

Forward Current (Peak)

TC = 25°C, Under 1ms Pulse Width

1.5

Thermal Resistance

Symbol

Parameter

Conditions

Rating

Unit

RJC

Junction to Case Thermal Resistance

Each MOSFET under Inverter Oper-

ating Condition (1st Note 1)

8.8

°C/W

Total System

Symbol

Parameter

Conditions

Rating

Unit

Operating Junction Temperature

-40 ~ 150

°C

TSTG

Storage Temperature

-40 ~ 125

°C

VISO

Isolation Voltage

60 Hz, Sinusoidal, 1 Minute, Con-

nect Pins to Heat Sink Plate

1500

Vrms

1st Notes:

1. For the measurement point of case temperature TC, please refer to Figure 4.

2. Marking “ * “ is calculation value or design factor.

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