AOC3868 datasheet(2/5 Pages) AOSMD

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AOC3868

Symbol

Min

Typ

Max

Units

BVSSS

TJ=55°C

IGSS

±10

µA

VGS(th)

Gate Threshold Voltage

0.4

0.72

1.1

2.9

4.15

5.0

TJ=125°C

3.8

5.5

6.6

3.0

4.25

5.3

mΩ

3.1

4.35

5.5

mΩ

3.2

4.6

6.0

mΩ

3.5

5.1

7.0

mΩ

gFS

VFSS

0.59

1.2

KΩ

tD(on)

1.2

µs

tD(off)

5.5

µs

9.5

µs

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT

DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

ISSS

µA

Zero Gate Voltage Source Current

Source-Source Breakdown Voltage

IS=250µA, VGS=0V

Test Circuit 6

VSS=12V, VGS=0V

Test Circuit 1

Turn-Off Fall Time

VG1S1=4.5V, VSS=6V, RL=1.5Ω,

RGEN=3Ω

Test Circuit8

Forward Source to Source Voltage

VGS=3.7V, IS=4A

Test Circuit 4

Turn-On Rise Time

Forward Transconductance

IS=1A,VGS=0V

Test Circuit 5

VSS=5V, IS=4A

Test Circuit 3

Turn-On DelayTime

Turn-Off DelayTime

Static Source to Source On-Resistance

VGS=3.1V, IS=4A

Test Circuit 4

VGS=2.5V, IS=4A

Test Circuit 4

VG1S1=4.5V, VSS=6V, IS=4A

Total Gate Charge

SWITCHING PARAMETERS

VSS=0V, VGS=±8V

Test Circuit 2

Gate leakage current

RSS(ON)

VSS=VGS, IS=250µA

Test Circuit 3

VGS=4.5V, IS=4A

Test Circuit 4

mΩ

VGS=4.0V, IS=4A

Test Circuit 4

DYNAMIC PARAMETERS

Gate resistance

f=1MHz

Rev.1.0: December 2016

www.aosmd.com

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