AOD2210 datasheet(2/6 Pages) AOSMD

2 / 6 page

Symbol

Min

Typ

Max

Units

BVDSS

200

VDS=200V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

1.5

2.0

2.5

105

TJ=125°C

185

225

120

mΩ

gFS

VSD

0.7

Ciss

2065

Coss

Crss

3.8

1.1

2.2

3.3

Ω

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tD(off)

mΩ

VGS=10V, VDS=100V, ID=18A

Total Gate Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Gate resistance

f=1MHz

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

RDS(ON)

Static Drain-Source On-Resistance

Gate Source Charge

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

Turn-On DelayTime

VDS=0V, VGS=±20V

Maximum Body-Diode Continuous Current

Input Capacitance

Gate-Body leakage current

Turn-Off DelayTime

Turn-Off Fall Time

VGS=10V, VDS=100V, RL=5.5Ω,

RGEN=3Ω

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=5V, ID=16A

Turn-On Rise Time

Reverse Transfer Capacitance

VGS=0V, VDS=100V, f=1MHz

VDS=VGS, ID=250µA

Output Capacitance

Forward Transconductance

IS=1A,VGS=0V

VDS=5V, ID=18A

VGS=10V, ID=18A

trr

Qrr

800

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=18A, dI/dt=500A/µs

Turn-Off Fall Time

IF=18A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175

C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=175°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev.1.0: August 2014

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