ZHCS500 datasheet(2/5 Pages) DIODES

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ZHCS500

Document number: DS33216 Rev. 6 - 2

2 of 5

www.diodes.com

December 2017

ZHCS500

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Continuous Reverse Voltage

Continuous Forward Current

500

Forward Voltage @ IF = 500mA

550

Average Peak Forward Current; D.C. = 50%

IFAV

1000

Non Repetitive Forward Current

100µs

IFSM

6.75

10ms

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, TA = +25°C

330

Junction Temperature

125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

—

IR = 200µA

Forward Voltage (Note 6)

—

270

300

IF = 50mA

—

300

350

IF = 100mA

—

370

460

IF = 250mA

—

465

550

IF = 500mA

—

550

670

IF = 750mA

—

640

780

IF = 1A

—

810

1050

IF = 1.5A

—

440

—

IF = 500mA, TA = +100°C

Reverse Current

—

µA

VR = 30V

Diode Capacitance

—

f = 1MHz, VR = 25V

Reverse Recovery Time

tRR

—

Switched from IF = 500mA to

IR = 500mA

Measured @ IR = 50mA

Notes:

6. Measured under pulsed conditions. P

ulse width = 300μS. Duty cycle = 2%.

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