ZHCS1000 datasheet(2/5 Pages) DIODES

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ZHCS1000

Document number: DS33220 Rev. 4 - 2

2 of 5

www.diodes.com

December 2013

ZHCS1000

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Continuous Reverse Voltage

Continuous Forward Current

Forward Voltage @ IF = 1A (typ)

425

Average Peak Forward Current; D.C. = 50%

IFAV

1750

Non Repetitive Forward Current

100μs

IFSM

10ms

5.2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, TA = +25°C

500

Junction Temperature

+125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

—

IR = 300μA

Forward Voltage (Note 5)

—

240

270

IF = 50mA

—

265

290

IF = 100mA

—

305

340

IF = 250mA

—

355

400

IF = 500mA

—

390

450

IF = 750mA

—

425

500

IF = 1A

—

495

600

IF = 1.5A

—

420

—

IF = 1A, TA = +100°C

Reverse Current (Note 6)

—

100

μA

VR = 30V

Total Capacitance

—

f = 1MHz, VR = 30V

Reverse Recovery Time

trr

—

Switched from IF = 500mA to

IR = 500mA

Measured @ IR = 50mA

Notes:

5. Measured under pulsed conditions. Pulse width = 300μS.

6. Short duration pulse test used to minimize self-heating effect.

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