AOL1422 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOL1422

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

VGS(th)

1.7

ID(ON)

150

3.7

TJ=125°C

4.2

5.2

4.4

5.4

gFS

VSD

0.69

Ciss

5450

6800

Coss

760

Crss

540

1.5

Ω

Qg (10V)

112

Qg (4.5V)

Qgs

Qgd

tD(on)

9.8

tD(off)

trr

Qrr

150

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=15V, ID=20A

Ω

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, ID=20A

IS=1A,VGS=0V

VDS=5V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=30V, VGS=0V

VDS=0V, VGS= ±16V

Zero Gate Voltage Drain Current

Gate-Body leakage current

µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/µs

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM

are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. The maximum current rating is limited by bond-wires.

* This device is guaranteed green after date code 8P11 (June 1

ST 2008)

Rev3: Jul 2008

Alpha & Omega Semiconductor, Ltd.

AOL1422 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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