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MMBT2222 Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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MMBT2222 Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 4 page  TRANSISTOR (NPN) MARKING: 1P MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Total Device Dissipation 200 mW RθJA ThermalResistanceFromJunction toAmbient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=10mA 100 300 hFE(2) VCE=1V, IC= 50mA 60 DC current gain hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Transition frequency fT VCE=20V, IC=10mA, f=100MHz 300 MHz Delay Time td 35 nS Rise Time tr VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS Storage Time ts 200 nS Fall Time tf VCC=3V, IC=10mA, IB1=-IB2=1mA 50 nS 1．BASE SOT-23 2．EMITTER 3．COLLECTOR MMBT2222 TIGER ELECTRONIC CO.,LTD |
Similar Part No. - MMBT2222 |
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Similar Description - MMBT2222 |
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