EMF6

Transistors

2/5

!

!

!

!

Absolute maximum ratings (Ta=25

°C)

Tr1

Parameter

Symbol

Tj

Tstg

Limits

−15

−12

−6

−500

150(TOTAL)

150

−55~+150

−1.0

∗1

∗2

Unit

V

V

V

mA

A

mW

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Tr2

Parameter

∗1 PW≤10ms Duty cycle≤50%

∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

Tch

Tstg

Limits

30

±20

100

200

150(TOTAL)

150

−55~+150

∗1

∗1

∗2

Unit

V

V

mA

200

mA

mA

100

mA

mW

°C

°C

Drain-source voltage

Gate-source voltage

Drain current

Reverse drain

current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Continuous

Pulsed

Pulsed

!

!

!

!

Electrical characteristics (Ta=25

°C)

Tr1

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

−

260

−

MHz

−12

−−

V

=−1mA

Collector-emitter breakdown voltage

−15

−−

V

=−10µA

Collector-base breakdown voltage

−6

−−

V

=−10µA

Emitter-base breakdown voltage

−−

−100

nA

=−15V

Collector cut-off current

−−

−100

nA

=−6V

Emitter cut-off current

−−100

−250

mV

Collector-emitter saturation voltage

270

−

680

−

DC current gain

Cob

−

6.5

−

pF

Collector output capacitance

Tr2

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Input capacitance

−

13

−

pF

−−

±1

µA

Gate-source leakage

30

−−

V

−−

1.0

µA

Zero gate voltage drain current

Drain-source breakdown voltage

0.8

−

1.5

Gate-threshold voltage

−

58

Ω

−

713

Ω

Static drain-source

on-state resistance

−

9

−

pF

Output capacitance

20

−−

ms

Forward transfer admittance

−

4

−

pF

Reverce transfer capacitance

Rise time

−

35

−

ns

−

80

−

ns

Turn-off delay time

−

15

−

ns

=10Ω

Turn-on delay time

−

80

−

ns

Fall time